IRF640N N-Channel Power MOSFET Transistor 18A 200V TO-220 Lot of 10 (10 pcs Pack

$ 3.43

Maximum Base-Emitter Voltage: -10 V MPN: IRF640N Brand: International Rectifier Maximum DC Collector Current: 18 A Transistor Category: Power Transistor Collector-Emitter Voltage: 200 V Configuration: Single Number of Pins: 3 Mounting Style: Through-Hole Maximum Operating Temperature: 150 °C (302 °F) Number of Elements per Chip: 1 Type: N-Channel Enhancement Mode MOSFET Minimum Operating Temperature: -55 °C (-67 °F) Country of Origin: China Maximum Collector-Base Voltage: 200 V Package/Case: TO-220

Description

IRF640N N-Channel Power MOSFET Transistor 18A 200V TO-220 Lot of 10 (10 pcs Pack. Part Number: IRF640 / IRF640N. Transistor Polarity: N-Channel Continuous Drain Current (Id): 18A. Up for sale is a 5-piece lot of genuine IRF640 Power MOSFETs. Common Applications. It is a staple component for industrial power electronics and DIY repair projects. Up for sale is a 5-piece lot of genuine IRF640 Power MOSFETs. This N-Channel enhancement mode silicon gate transistor is designed for high-speed switching and high-voltage reliability. It is a staple component for industrial power electronics and DIY repair projects. Part Number: IRF640 / IRF640N Transistor Polarity: N-Channel Continuous Drain Current (Id): 18A Drain-Source Voltage (Vds): 200V On-Resistance (Rds On): 0.18Ω (typical) Package / Case: TO-220 (Through-Hole) Power Dissipation: 125W Common Applications DC-DC Converters and Switching Power Supplies (SMPS) Motor Controllers (PWM speed control) High-Power Audio Amplifiers Uninterruptible Power Supplies (UPS) and Solar Inverter [Condition & Shipping] Condition: Brand New, unused components. Shipping: Ships with USPS Ground Advantage with Tracking from the USA. Items are shipped in anti-static ESD packaging for protection.